Active matrix substrate and liquid crystal display panel equipped with same

ABSTRACT

The present invention includes: switching elements ( 5 ) in respective sub-pixels (P); an interlayer insulating film covering the switching elements ( 5 ); a first transparent electrode ( 18   a ) on the interlayer insulating film, the first transparent electrode ( 18   a ) having openings ( 18   c ) for each sub-pixel (P); an inorganic insulating film covering the first transparent electrode ( 18   a ); and a plurality of second transparent electrodes ( 20   a ) on the inorganic insulating film, each of the second transparent electrodes ( 20   a ) being connected to one of the switching elements ( 5 ) through the respective openings ( 18   c ) in the first transparent electrode ( 18   a ). The respective second transparent electrodes ( 20   a ) have a line-and-space pattern (F) constituted of line-shaped line parts (L) and spaces (S), the spaces (S) not overlapping the respective openings ( 18   c ) in the first transparent electrode ( 18   a ).

TECHNICAL FIELD

The present invention relates to an active matrix substrate and a liquid crystal display panel provided therewith, and particularly relates to an active matrix substrate having auxiliary capacitances using transparent electrodes and a liquid crystal display panel provided therewith.

BACKGROUND ART

An active matrix driven liquid crystal display panel includes an active matrix substrate having switching elements such as thin-film transistors (hereinafter, also referred to as “TFTs”) for each sub-pixel, which are the smallest units of an image, an opposite substrate facing the active matrix substrate, and a liquid crystal layer between these two substrates, for example. In many active matrix substrates, an auxiliary capacitance is provided in each sub-pixel to stably maintain the liquid crystal layer, or namely, the charge supplied to the liquid crystal capacitances of the respective sub-pixels. In liquid crystal display panels, there is always a demand for a greater proportion of area in each sub-pixel to be able to let light from the backlight pass through, or in other words, for a higher aperture ratio. Furthermore, in liquid crystal display panels, a single pixel is constituted of a sub-pixel for red gradient display, a sub-pixel for green gradient display, and a sub-pixel for blue gradient display, for example.

A liquid crystal display device and a method of manufacturing the same is disclosed in Patent Document 1, for example, in which auxiliary capacitances are formed by transparent electrodes formed on an interlayer insulating film, a coated transparent insulating film covering the transparent electrodes, and pixel electrodes on the coated transparent insulating film. This is done to improve the aperture ratio and increase the auxiliary capacitance.

RELATED ART DOCUMENT Patent Document

Patent Document 1: Japanese Patent Application Laid-Open Publication No. 2008-26430

SUMMARY OF THE INVENTION Problems to be Solved by the Invention

However, in an active matrix substrate that includes TFTs in the respective sub-pixels, an organic insulating film covering the respective TFTs, first transparent electrodes on the organic insulating film, an inorganic insulating film covering the first transparent electrodes, and second transparent electrodes provided on the inorganic insulating film and connected to the respective TFTs, and in which auxiliary capacitances are formed by the first transparent electrodes, second transparent electrodes, and the inorganic insulating film therebetween, there are openings in the respective first transparent electrodes forming a portion of the auxiliary capacitance for the respective sub-pixels, and these openings ensure an electrical connection between the TFTs and the second transparent electrodes.

The first transparent electrodes are commonly formed by wet etching a film made of an oxide semiconductor material such as IZO (indium zinc oxide) or ITO (indium tin oxide); therefore, the side walls of the respective openings are steep, and this is likely to have a negative impact on the coatability of the inorganic insulating film deposited above the openings. Thus, in the oxide semiconductor film deposited on the inorganic insulating film in order to form the second transparent electrodes, there is a risk that the level difference corresponding to the side walls of the respective openings in the inorganic insulating film could lower film quality, or in other words, that the etching speed at the portions with level differences will be high. The second transparent electrodes have a line-and-space pattern for regulating the orientation of the liquid crystal layer. Specifically, at least a portion of the second electrodes are formed in a comb shape, for example, and when forming a narrow over-part that goes over the first transparent electrodes across the inorganic insulating film on the second transparent electrodes, there is a risk that the etchant will leak from the level-difference parts of the oxide semiconductor film when wet etching the oxide semiconductor film on the inorganic insulating film. In this case, the over-part of the second transparent electrodes will be excessively etched from the side during wet etching of the oxide semiconductor film, and thus, the second transparent electrodes will be disconnected at the over-part.

The present invention was made in view of these points, and aims at suppressing disconnection of line-and-space pattern second transparent electrodes disposed on first transparent electrodes through an inorganic insulating film.

Means for Solving the Problems

To achieve the above-mentioned aims, the present invention has a configuration in which respective second transparent electrodes have a line-and-space pattern constituted of line-shaped line parts and spaces that do not overlap respective openings in a first transparent electrode.

Specifically, an active matrix substrate according to the present invention has a plurality of sub-pixels arranged in a matrix; a switching element disposed in each of the sub-pixels; at least one interlayer insulating film covering the switching elements and having contact holes formed in the respective sub-pixels, the contact holes reaching the respective switching elements; a first transparent electrode disposed on the at least one interlayer insulating film and having an opening in each of the respective sub-pixels; an inorganic insulating film covering the first transparent electrode; and a plurality of second transparent electrodes disposed on the inorganic insulating film and respectively connecting to the switching elements through the respective contact holes in the at least one interlayer insulating film and the respective openings in the first transparent electrode, wherein the respective second transparent electrodes have a line-and-space pattern constituted of line-shaped line parts and spaces, the spaces being disposed so as not to overlap the respective openings in the first transparent electrode.

With this configuration, the respective second transparent electrodes on the inorganic insulating film have a line-and-space pattern constituted of line-shaped line parts and spaces that do not overlap the respective openings in the first transparent electrode; therefore, the oxide conductive film acting as the second transparent electrodes is deposited on the inorganic insulating film, and thereafter, when wet etching this oxide conductive film, it is difficult for the etchant to contact the oxide conductive film level-difference parts formed on the edges of the respective openings in the first transparent electrode through the inorganic insulating film. Specifically, in the wet etching of the oxide conductive film, the portions of the oxide conductive film left by the resist become the line parts of the respective second transparent electrodes, and the portions of the oxide conductive film removed by the etchant become the spaces of the respective second transparent electrodes; thus, the spaces of the respective second transparent electrodes are arranged so as not to overlap the respective openings in the first transparent electrode, thereby making it difficult for the etchant to contact the level-difference parts of the oxide conductive film. Therefore, it is difficult for the etchant to leak to the level-difference parts of the oxide conductive film, and thus, unwanted etching caused by the level-difference parts of the oxide conductive film during formation of the line parts of the respective second transparent electrodes is suppressed. This suppresses disconnection of the line parts of the respective second transparent electrodes, and therefore, disconnection of the second transparent electrodes having a line-and-space pattern disposed on the first transparent electrode through the inorganic insulating film is suppressed.

The respective second transparent electrodes may cover the respective openings in the first transparent electrode across the inorganic insulating film.

With this configuration, the respective second transparent electrodes cover the respective openings in the first transparent electrode through the inorganic insulating film; thus, the etchant will hardly contact the oxide conductive film level-difference parts formed on the edges of the respective openings in the first transparent electrode through the inorganic insulating film, and disconnection of the second transparent electrodes provided on the first transparent electrode through the inorganic insulating film will be suppressed.

The respective openings in the first transparent electrode may be rectangular, and the respective second transparent electrodes may cover at least one edge of the respective openings in the first transparent electrode across the inorganic insulating film.

With this configuration, the respective openings in the first transparent electrode are rectangular, and the respective second transparent electrodes cover at least one edge of the respective openings in the first transparent electrode through the inorganic insulating film; therefore, it is difficult for etchant to contact the oxide conductive film level-difference parts on the side covering the edge of the respective openings in the first transparent electrode, and this suppresses disconnection of the second transparent electrodes provided on the first transparent electrode through the inorganic insulating film.

The inorganic insulating film may be a silicon oxide film or a silicon nitride film deposited by sputtering.

With this configuration, the inorganic insulating film is constituted of a silicon oxide film or silicon nitride film deposited by sputtering; therefore, the deposition temperature at the time of depositing the inorganic insulating film is lower than if CVD (chemical vapor deposition) were used, and characteristic degradation of the semiconductor layer constituted of the oxide semiconductor forming the switching elements is suppressed, for example. The hydrogen concentration of an inorganic insulating film deposited by sputtering is very low and below the hydrogen concentration of an inorganic insulating film formed by CVD; thus, an inorganic insulating film deposited by sputtering can be assessed by analysis devices such as TDS (thermal desorption (mass) spectrometry) or SIMS (secondary ion mass spectrometry).

A liquid crystal display panel of the present invention includes the active matrix substrate according to any one of the configurations above, an opposite substrate that faces the active matrix substrate, and a liquid crystal layer disposed between the active matrix substrate and the opposite substrate.

With this configuration, in the active matrix substrate, the respective second transparent electrodes on the inorganic insulating film have a line-and-space pattern constituted of line-shaped line parts and spaces that do not overlap the respective openings in the first transparent electrode; therefore, the oxide conductive film acting as the second transparent electrodes is deposited on the inorganic insulating film, and thereafter, when wet etching this oxide conductive film, it is difficult for the etchant to contact the oxide conductive film level-difference parts formed on the edges of the respective openings in the first transparent electrode through the inorganic insulating film. Specifically, in the wet etching of the oxide conductive film, the portions of the oxide conductive film left by the resist become the line parts of the respective second transparent electrodes, and the portions of the oxide conductive film removed by the etchant become the spaces of the respective second transparent electrodes; thus, the spaces of the respective second transparent electrodes are arranged so as not to overlap the respective openings in the first transparent electrode, thereby making it difficult for the etchant to contact the level-difference parts of the oxide conductive film. Therefore, it is difficult for the etchant to leak to the level-difference parts of the oxide conductive film, and thus, unwanted etching caused by the level-difference parts of the oxide conductive film during formation of the line parts of the respective second transparent electrodes is suppressed. In a liquid crystal display panel provided with an active matrix substrate, this suppresses disconnection of the line parts of the respective second transparent electrodes, and therefore, disconnection of the second transparent electrodes having a line-and-space pattern disposed on the first transparent electrode through the inorganic insulating film is suppressed.

A voltage may be applied to the liquid crystal layer through the first transparent electrode and the respective second transparent electrodes.

With this configuration, a voltage is applied to the liquid crystal layer through the first transparent electrode and the respective second transparent electrodes, and thus, in an active matrix substrate included in a so-called lateral electrical field liquid crystal display panel, disconnection of the line parts of the respective second transparent electrodes is suppressed, and disconnection of the line-and-space pattern second transparent electrodes disposed on the first transparent electrode through the inorganic insulating film is suppressed.

A common electrode may be disposed on the opposite substrate, and a voltage may be applied to the liquid crystal layer through the respective second transparent electrodes and the common electrode.

With this configuration, the common electrode is provided on the opposite substrate and the voltage is applied to the liquid crystal layer through the respective second transparent electrodes and the common electrode, and thus, in an active matrix substrate included in a so-called vertical electrical field liquid crystal display panel, disconnection of the line parts of the respective second transparent electrodes is suppressed, and disconnection of the line-and-space pattern second transparent electrodes disposed on the first transparent electrode through the inorganic insulating film is suppressed.

Effects of the Invention

According to the present invention, the respective second transparent electrodes have a line-and-space pattern constituted of a line-shaped line part and a space that is provided so as not to overlap the respective openings of the first transparent electrode; thus, disconnection of the line-and-space pattern second transparent electrodes provided on the first transparent electrode through the inorganic insulating film can be suppressed.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a cross-sectional view of a liquid crystal display panel according to Embodiment 1.

FIG. 2 is a plan view of an active matrix substrate forming a part of the liquid crystal display panel of Embodiment 1.

FIG. 3 is a cross-sectional view of the active matrix substrate of FIG. 2 along the line III-III.

FIG. 4 is another cross-sectional view of the active matrix substrate forming a part of the liquid crystal display panel of Embodiment 1.

FIG. 5 is a plan view of an active matrix substrate forming a part of a liquid crystal display panel of Embodiment 2.

FIG. 6 is a plan view of an active matrix substrate forming a part of a liquid crystal display panel of Embodiment 3.

FIG. 7 is a plan view of an active matrix substrate forming a part of a liquid crystal display panel of Embodiment 4.

FIG. 8 is a cross-sectional view of a liquid crystal display panel according to Embodiment 5.

DETAILED DESCRIPTION OF EMBODIMENTS

An embodiment of the present invention will be described in detail below with reference to drawings. The present invention is not limited to the embodiments below.

Embodiment 1

FIGS. 1 to 4 show an active matrix substrate and a liquid crystal display panel provided therewith according to Embodiment 1 of the present invention. Specifically, FIG. 1 is a cross-sectional view of a liquid crystal display panel 50 a of the present embodiment. FIG. 2 is a plan view of an active matrix substrate 30 a forming a part of the liquid crystal display panel 50 a, and FIG. 3 is a cross-sectional view of the active matrix substrate 30 a of FIG. 2 along the line III-III. FIG. 4 is another cross-sectional view of the active matrix substrate 30 a.

As shown in FIG. 1, the liquid crystal display panel 50 a includes: the active matrix substrate 30 a and an opposite substrate 40 a provided so as to face each other; a liquid crystal layer 45 a between the active matrix substrate 30 a and the opposite substrate 40 a; and a frame-shaped sealing member (not shown) for bonding the active matrix substrate 30 a and the opposite substrate 40 a together and for sealing the liquid crystal layer 45 a between the active matrix substrate 30 a and the opposite substrate 40 a. In the liquid crystal display panel 50 a, a display area that performs image display is defined inside the sealing member, and a plurality of pixels are arranged in a matrix in this display area. A sub-pixel P (see FIG. 2) for red gradient display, a sub-pixel P for green gradient display, and a sub-pixel P for blue gradient display, for example, are arrayed in the respective pixels.

As shown in FIGS. 1 to 3, the active matrix substrate 30 a includes: a transparent substrate 10 a; a plurality of gate lines 11 a on the transparent substrate 10 a extending parallel to each other in the horizontal direction of FIG. 2; a gate insulating film 12 a covering the respective gate lines 11 a; a plurality of source lines 14 a on the gate insulating film 12 a extending parallel to each other in the direction (vertical direction in FIG. 2) that intersects the respective gate lines 11 a; a plurality of TFTs 5, one TFT being arranged at each intersection of the respective gate lines 11 a and the respective source lines 14 a, or namely, in each of the respective sub-pixels P; an interlayer insulating film 17 a covering the respective TFTs 5 and the respective source lines 14 a; a common electrode 18 a provided on the interlayer insulating film 17 a as the first transparent electrode; an inorganic insulating film 19 a covering the common electrode 18 a; a plurality of pixel electrodes 20 a connected to the respective TFTs 5 and provided in a matrix on the inorganic insulating film 19 a as the second transparent electrodes; and an alignment film (not shown) covering the respective pixel electrodes 20 a.

The gate lines 11 a extend to outside the display area, and as shown in FIG. 4, the gate line 11 a is connected to an extending wiring line 14 c outside the display area through a contact hole 17 cb formed in a multilayer film of the interlayer insulating film 17 a and the gate insulating film 12 a, a contact hole 17 cc formed in the interlayer insulating film 17 a, contact holes 19 cb and 19 cc formed in the inorganic insulating film 19 a, and a transparent electrode layer 20 t.

As shown in FIGS. 2 and 3, the TFT 5 includes: a gate electrode (11 a) on the transparent substrate 10 a; the gate insulating film 12 a covering the gate electrode (11 a); an island-shaped semiconductor layer 13 a provided on the gate insulating film 12 a so as to overlap the gate electrode (11 a); and a source electrode 14 aa and a drain electrode 14 b provided with a gap therebetween on the semiconductor layer 13 a.

As shown in FIG. 2, the gate electrode (11 a) is a part of the respective gate lines 11 a.

As shown in FIG. 2, the source electrode 14 aa is a part of the respective source lines 14 a protruding towards the respective sub-pixels P.

As shown in FIGS. 2 and 3, the drain electrode 14 b connects to the pixel electrode 20 a through contact holes 17 ca formed in the interlayer insulating film 17 a for the respective sub-pixels P, openings 18 c formed in the common electrode 18 a for the respective sub-pixels P, and contact holes 19 ca formed in the inorganic insulating film 19 a for the respective sub-pixels P.

As shown in FIGS. 1 to 3, the common electrode 18 a is formed integrally across all the sub-pixels P, and has the rectangular-shaped openings 18 c for connecting the drain electrodes 14 b to the pixel electrodes 20 a in the respective sub-pixels P. As shown in FIGS. 1 to 3, the common electrode 18 a forms an auxiliary capacitance 6 by overlapping the pixel electrodes 20 a across the inorganic insulating film 19 a in the respective sub-pixels P.

As shown in FIGS. 1, 3, and 4, the interlayer insulating film 17 a includes a first interlayer insulating film 15 a on the transparent substrate 10 a side, and a second interlayer insulating film 16 a stacked on the first interlayer insulating film 15 a. As shown in FIGS. 1 to 4, the contact holes 17 ca for connecting the drain electrodes 14 b to the pixel electrodes 20 a, the contact holes 17 cb for connecting the gate lines 11 a to the transparent electrode layer 20 t, and the contact holes 17 cc for connecting the transparent electrode layer 20 t to the extended wiring lines 14 c are provided in the interlayer insulating film 17 a.

As shown in FIGS. 1 to 4, the contact holes 19 ca for connecting the drain electrodes 14 b to the pixel electrodes 20 a, the contact holes 19 cb for connecting the gate lines 11 a to the transparent electrode layer 20 t, and the contact holes 19 cc for connecting the transparent electrode layer 20 t to the extended wiring lines 14 c are provided in the inorganic insulating film 19 a.

As shown in FIG. 2, the pixel electrode 20 a has a ladder shape and has a line-and-space pattern F constituted of a plurality of line-shaped line parts L extending parallel to each other and a plurality of spaces S respectively extending between the plurality of line parts L. As shown in FIG. 2, the spaces S are provided so as not to overlap the respective openings 18 c in the common electrode 18 a. As shown in FIG. 2, the pixel electrodes 20 a cover the respective openings 18 c in the common electrode 18 a through the inorganic insulating film 19 a.

As shown in FIG. 1, the opposite substrate 40 b includes: a transparent substrate 10 b; a grid-shaped black matrix (not shown) on the transparent substrate 10 b; a plurality of colored layers (not shown) such as red layers, green layers, and blue layers respectively disposed between the respective grid lines of the black matrix; a plurality of column-shaped photo spacers (not shown) on the black matrix; and an alignment film (not shown) covering the respective colored layers, black matrix, and photo spacers.

The liquid crystal layer 45 a is made of a nematic liquid crystal material or the like that has electro-optic characteristics.

The liquid crystal display panel 50 a with the configuration above applies a prescribed voltage for the respective sub-pixels P to the liquid crystal layer 45 a arranged between the respective pixel electrodes 20 a and the common electrode 18 a on the active matrix substrate 30 a in order to change the orientation state of the liquid crystal layer 45 a with a lateral electric field. This changes the transmittance of light passing through the panel for the respective sub-pixels P in order to display an image.

Next, a method a manufacturing the liquid crystal display panel 50 a of the present embodiment will be explained. A method of manufacturing the liquid crystal display panel 50 a of the present embodiment includes making an active matrix substrate, making an opposite substrate, and injecting liquid crystal.

<Making Active Matrix Substrate>

First, a titanium film (thickness of approximately 30 nm), an aluminum film (thickness of approximately 100 nm), a titanium film (thickness of approximately 50 nm), or the like are sequentially deposited onto the entire substrate of the transparent substrate 10 a, which is a glass substrate, plastic substrate, or the like, for example. Thereafter, the gate lines 11 a including the gate electrodes (11 a) are formed by performing photolithography, dry-etching using the chlorine-based gas, and removal of the resist on this metal multilayer film.

Next, a silicon nitride film (thickness of approximately 300 nm) and a silicon oxide film (thickness of approximately 50 nm) are deposited by CVD (chemical vapor deposition), for example, on the entire substrate where the gate lines 11 a are formed in order to form the gate insulating film 12 a.

Then, an In—Ga—Zn—O oxide semiconductor film (thickness of approximately 50 nm) is deposited by sputtering, for example, onto the entire substrate where the gate insulating film 12 a is formed and then photolithography, wet etching using oxalic acid, and removal of the resist are performed on this oxide semiconductor film in order to form the semiconductor layer 13 a. In the present embodiment, an oxide semiconductor such as In—Ga—Zn—O was shown as an example of the semiconductor layer 13 a, but the semiconductor layer 13 a may be amorphous silicon or polysilicon, for example.

A titanium film (thickness of approximately 30 nm), an aluminum film (thickness of approximately 100 nm), a titanium film (thickness of 50 nm), or the like are sequentially deposited by sputtering, for example, onto the entire substrate where the semiconductor layer 13 a is formed. Thereafter, photolithography, dry etching with a chlorine-based gas, and removal of the resist are performed on this metal multilayer film in order to form the source electrodes 14 aa and drain electrodes 14 b, thereby forming the TFTs 5, and to form the source lines 14 a and extending wiring lines 14 c.

Next, a silicon oxide film (thickness of approximately 200 nm) is deposited by CVD or sputtering, for example, on the entire substrate where the TFTs 5 are formed in order to form the first interlayer insulating film 15 a.

A photosensitive resin made of a photosensitive acrylic resin or the like is coated by spin coating or slit coating, for example, on the entire substrate where the first interlayer insulating film 15 a is formed. Thereafter, the photosensitive resin film is exposed, developed, and baked in order to form the second interlayer insulating film 16 a at a thickness of approximately 2.5 μm, the second interlayer insulating film 16 a having the contact holes 17 ca, 17 cb, and 17 cc.

Dry etching with a fluorine-based gas and removal of the resist are performed on the first interlayer insulating film 15 a exposed in the second interlayer insulating film 16 a, and on the multilayer film of the first interlayer insulating film 15 a and the gate insulating film 12 a in order to form the respective contact holes in the gate insulating film 12 a and the first interlayer insulating film 15 a.

Next, an oxide conductive film (thickness of approximately 50 nm) such as an amorphous ITO film or an IZO film is deposited by sputtering, for example, on the entire substrate where the respective contact holes have been formed in the gate insulating film 12 a and the first interlayer insulating film 15 a. Thereafter, photolithography, etching with oxalic acid, and removal of the resist are performed on the oxide conductive film in order to form the common electrode 18 a.

Then, an inorganic insulating film such as a silicon oxide film or a silicon nitride film is formed by sputtering, for example, at a thickness of approximately 200 nm to 400 nm on the entire substrate where the common electrode 18 a is formed. Thereafter, photolithography, etching with a fluorine-based gas, and removal of the resist are performed on this inorganic insulating film in order to form the inorganic insulating film 19 a. In the present embodiment, a method was shown in which the silicon oxide film or silicon nitride film deposited by sputtering is patterned to form the inorganic insulating film 19, but if the semiconductor layer 13 a is amorphous silicon or polysilicon, for example, then there is no risk of a characteristic degradation of the semiconductor layer 13 a resulting from reduction in the CVD process; thus, the inorganic insulating film 19 a may be formed by patterning a silicon oxide film or a silicon nitride film that has been deposited by CVD.

Next, an oxide conductive film (thickness of approximately 50 nm) such as an amorphous ITO film or an IZO film is deposited by sputtering, for example, on the entire substrate where the inorganic insulating film 19 a has been formed. Thereafter, photolithography, etching with oxalic acid, and removal of the resist are performed on the oxide conductive film in order to form the pixel electrodes 20 a.

Finally, a polyimide resin film is coated by a printing method, for example, on the entire substrate where the pixel electrodes 20 a are formed. Thereafter, this resin film undergoes a baking and rubbing treatment to form the alignment film.

The active matrix substrate 30 a can be made in the manner above.

<Making Opposite Substrate>

First, a black photosensitive resin is coated by spin coating or slit coating, for example, onto the entire substrate of the transparent substrate 10 b, which is a glass substrate, plastic substrate, or the like. Thereafter, this photosensitive resin film is exposed, developed, and baked to form the black matrix at a thickness of approximately 2.0 μm.

Next, a red, green, or blue photosensitive resin is coated by spin coating or slit coating, for example, onto the entire substrate where the black matrix has been formed. Thereafter, this photosensitive resin film is exposed, developed, and baked to form the colored layer of the chosen color (a red layer, for example) at a thickness of approximately 2.0 μm. Then, repeating a similar step for the other two colors, colored layers of the other two colors (green layer and blue layer, for example) are formed with a thickness of approximately 2.0 μm.

A photosensitive resin film made of a photosensitive acrylic resin or the like is coated by spin coating or slit coating, for example, on the entire substrate where the respective colored layers have been formed. Thereafter, this photosensitive resin film is exposed, developed, and baked to form photo spacers at a thickness of approximately 4.0 μm.

Finally, a polyimide resin film is coated by a printing method, for example, on the entire substrate where the photo spacers have been formed. Thereafter, this resin film undergoes a baking and rubbing treatment to form the alignment film.

The opposite substrate 40 a can be made in this manner.

<Injecting Liquid Crystal>

First, a sealing material made of a resin that is both UV (ultraviolet) curable and thermally curable or the like is printed in a frame shape on the surface of the opposite substrate 40 a made in the step of making the opposite substrate, for example. Thereafter, liquid crystal material is dripped into the sealing member.

Next, the opposite substrate 40 a where the liquid crystal material has been dripped and the active matrix substrate 30 a made in the step of making the active matrix substrate are bonded together under reduced pressure. Thereafter, this bonded member is introduced to atmospheric pressure to pressurize the front surface and rear surface thereof.

UV light is radiated on the sealing member sandwiched between this bonded member, and thereafter the sealing member is cured by heating the bonded member.

Lastly, by dicing the bonded member in which the sealing member has been cured, for example, unnecessary portions are removed.

The liquid crystal display panel 50 a can be made in the manner above.

As described above, according to the active matrix substrate 30 a of the present embodiment and the lateral electrical field liquid crystal display panel 50 a provided therewith, the respective pixel electrodes 20 a on the inorganic insulating film 19 a on the active matrix substrate 30 a have the line-and-space pattern F that are each constituted of the line-shaped line parts L and the spaces S provided so as not to overlap the respective openings 18 c in the common electrode 18 a; therefore, after the oxide conductive film serving as the pixel electrodes 20 a is deposited on the inorganic insulating film 19 a, it is possible to make it difficult for the etchant to contact the level-difference part of the oxide conductive film formed on the edges of the respective openings 18 c in the common electrode 18 a through the inorganic insulating film 19 a when wet etching this oxide conductive film. Specifically, in the wet etching of the oxide conductive film, the portions of the oxide conductive film left by the resist become the line parts L of the respective pixel electrodes 20 a, and the portions of the oxide conductive film removed by the etchant become the spaces S of the respective pixel electrodes 20 a; thus, it is possible to make it difficult for the etchant to contact the level-difference part of the oxide conductive film by arranging the spaces S of the respective pixel electrodes 20 a so as not to overlap the respective openings 18 c of the common electrode 18 a. Therefore, it is difficult for the etchant to leak to the level-difference parts of the oxide conductive film, and thus, unwanted etching caused by the level-difference parts of the oxide conductive film during formation of the line parts L of the respective pixel electrode 20 a can be suppressed. This allows disconnection of the line parts L of the respective pixel electrodes 20 a to be suppressed; therefore, it is possible to suppress disconnection of the line-and-space pattern F pixel electrodes 20 a disposed on the common electrode 18 a through the inorganic insulating film 19 a.

Furthermore, according to the active matrix substrate 30 a of the present embodiment and the liquid crystal display panel 50 a provided therewith, the respective pixel electrodes 20 a cover the respective openings 18 c of the common electrode 18 a through the inorganic insulating film 19 a; therefore, the etchant will hardly come into contact with the level-difference parts of the oxide conductive film formed on the edges of the respective openings 18 c of the common electrode 18 a through the inorganic insulating film 19 a, and disconnection of the pixel electrodes 20 a disposed on the common electrode 18 a through the inorganic insulating film 19 a can be reliably suppressed.

According to the active matrix substrate 30 a of the present embodiment and the liquid crystal display panel 50 a provided therewith, the inorganic insulating film 19 a is constituted of the silicon oxide film or silicon nitride film deposited by sputtering; thus, the deposition temperature during deposition of the inorganic insulating film 19 a is lower than if deposition were performed by CVD, and characteristic degradation due to reduction of the semiconductor layer 13 a made of the oxide semiconductor forming a part of the TFT 5 can be suppressed.

Embodiment 2

FIG. 5 is a plan view of an active matrix substrate 30 b forming a part of a liquid crystal display panel of the present embodiment. In each embodiment below, the same members as those in FIGS. 1 to 4 are given the same reference characters, and the descriptions thereof are not repeated.

In Embodiment 1, the active matrix substrate 30 a having the pixel electrodes 20 a covering the respective openings 18 c of the common electrode 18 a was shown as an example, but in the present embodiment, the active matrix substrate 30 b having pixel electrodes 20 b covering a portion of respective openings 18 c of a common electrode 18 a is shown as an example.

The liquid crystal display panel of the present embodiment includes: the active matrix substrate 30 b and an opposite substrate (40 a, see FIG. 1) facing each other; a liquid crystal layer (45 a, see FIG. 1) between the active matrix substrate 30 b and the opposite substrate 40 a; and a frame-shaped sealing member for bonding the active matrix substrate 30 b and the opposite substrate 40 a together and for sealing the liquid crystal layer 45 a between the active matrix substrate 30 b and the opposite substrate 40 a.

As shown in FIG. 5, the active matrix substrate 30 b includes: a transparent substrate (10 a, see FIG. 1); a plurality of gate lines 11 a on the transparent substrate 10 a extending parallel to each other in the horizontal direction of the drawing; a gate insulating film (12 a, see FIG. 1) covering the respective gate lines 11 a; a plurality of source lines 14 a on the gate insulating film 12 a extending parallel to each other in the direction (vertical direction in the drawing) that intersects the respective gate lines 11 a; a plurality of TFTs 5, one TFT being arranged at each intersection of the respective gate lines 11 a and the respective source lines 14 a, or namely, at each of respective sub-pixels P; an interlayer insulating film (17 a, see FIG. 1) covering the respective TFTs 5 and the respective source lines 14 a; a common electrode 18 a provided on the interlayer insulating film 17 a; an inorganic insulating film (19 a, see FIG. 1) covering the common electrode 18 a; a plurality of the pixel electrodes 20 b connected to the respective TFTs 5 and provided in a matrix on the inorganic insulating film 19 a as the second transparent electrodes; and an alignment film (not shown) covering the respective pixel electrodes 20 b.

As shown in FIG. 5, the pixel electrodes 20 b have a ladder shape and have a line-and-space pattern F constituted of a plurality of line-shaped line parts L extending parallel to each other and a plurality of spaces S respectively extending between the plurality of line parts L. As shown in FIG. 5, the spaces S are provided so as not to overlap the respective openings 18 c in the common electrode 18 a. As shown in FIG. 5, the pixel electrodes 20 b cover the edges of three sides (the left side, top side, and right side in the drawing) of the respective openings 18 c in the common electrode 18 a across the inorganic insulating film 19 a.

The active matrix substrate 30 b of the above configuration can be made if the pattern shape of the pixel electrodes 20 a in the step of making the active matrix substrate of Embodiment 1 is changed.

As described above, according to the active matrix substrate 30 b of the present embodiment and the lateral electrical field liquid crystal display panel provided therewith, the respective pixel electrodes 20 b are the line-and-space pattern F constituted of the line-shaped line parts L and the spaces S provided so as not to overlap the respective openings 18 c in the common electrode 18 a; therefore, it is possible to suppress disconnection of the line parts L of the respective pixel electrodes 20 b and to suppress disconnection of the line-and-space pattern F pixel electrodes 20 provided on the common electrode 18 a through the inorganic insulating film 19 a.

Embodiment 3

FIG. 6 is a plan view of an active matrix substrate 30 c forming a part of a liquid crystal display panel of the present embodiment.

In Embodiment 2 described above, an example was shown in which the active matrix substrate 30 b has the pixel electrodes 20 b covering the three edges of the respective openings 18 c in the common electrode 18 a, but in the present embodiment, the active matrix substrate 30 c has pixel electrodes 20 c covering two edges of respective openings 18 c of a common electrode 18 a.

The liquid crystal display panel of the present embodiment includes: the active matrix substrate 30 c and an opposite substrate (40 a, see FIG. 1) facing each other; a liquid crystal layer (45 a, see FIG. 1) between the active matrix substrate 30 c and the opposite substrate 40 a; and a frame-shaped sealing member for bonding the active matrix substrate 30 c and the opposite substrate 40 a together and for sealing the liquid crystal layer 45 a between the active matrix substrate 30 c and the opposite substrate 40 a.

As shown in FIG. 6, the active matrix substrate 30 c includes: a transparent substrate (10 a, see FIG. 1); a plurality of gate lines 11 a on the transparent substrate 10 a extending parallel to each other in the horizontal direction of the drawing; a gate insulating film (12 a, see FIG. 1) covering the respective gate lines 11 a; a plurality of source lines 14 a on the gate insulating film 12 a extending parallel to each other in the direction (vertical direction in the drawing) that intersects the respective gate lines 11 a; a plurality of TFTs 5, one TFT being arranged at each intersection of the respective gate lines 11 a and the respective source lines 14 a, or namely, at each of respective sub-pixels P; an interlayer insulating film (17 a, see FIG. 1) covering the respective TFTs 5 and the respective source lines 14 a; a common electrode 18 a provided on the interlayer insulating film 17 a; an inorganic insulating film (19 a, see FIG. 1) covering the common electrode 18 a; a plurality of the pixel electrodes 20 c connected to the respective TFTs 5 and provided in a matrix on the inorganic insulating film 19 a as the second transparent electrodes; and an alignment film (not shown) covering the respective pixel electrodes 20 c.

As shown in FIG. 6, the pixel electrodes 20 c have a ladder shape and have a line-and-space pattern F constituted of a plurality of line-shaped line parts L extending parallel to each other and a plurality of spaces S respectively extending between the plurality of line parts L. As shown in FIG. 6, the spaces S are provided so as not to overlap the respective openings 18 c in the common electrode 18 a. As shown in FIG. 6, the pixel electrodes 20 c cover the edges of two sides (the top side and right side in the drawing) of the respective openings 18 c in the common electrode 18 a through the inorganic insulating film 19 a.

The active matrix substrate 30 c of the above configuration can be made if the pattern shape of the pixel electrodes 20 a in the step of making the active matrix substrate of Embodiment 1 is changed.

As described above, according to the active matrix substrate 30 c of the present embodiment and the lateral electrical field liquid crystal display panel provided therewith, the respective pixel electrodes 20 c are the line-and-space pattern F constituted of the line-shaped line parts L and the spaces S provided so as not to overlap the respective openings 18 c in the common electrode 18 a; therefore, it is possible to suppress disconnection of the line parts L of the respective pixel electrodes 20 c and to suppress disconnection of the line-and-space pattern F pixel electrodes 20 c provided on the common electrode 18 a through the inorganic insulating film 19 a.

Embodiment 4

FIG. 7 is a plan view of an active matrix substrate 30 d forming a part of a liquid crystal display panel of the present embodiment.

In Embodiment 2 described above, an example was shown in which the active matrix substrate 30 b has the pixel electrodes 20 b covering the three edges of the respective openings 18 c in the common electrode 18 a, and in Embodiment 3 an example was shown in which the active matrix substrate 30 c has the pixel electrodes 20 c covering two edges of respective openings 18 c of the common electrode 18 a, but in the present embodiment, an example is shown in which an active matrix substrate 30 d has pixel electrodes 20 d covering one edge of respective openings 18 c in a common electrode 18 a.

The liquid crystal display panel of the present embodiment includes: the active matrix substrate 30 d and an opposite substrate (40 a, see FIG. 1) facing each other; a liquid crystal layer (45 a, see FIG. 1) between the active matrix substrate 30 d and the opposite substrate 40 a; and a frame-shaped sealing member for bonding the active matrix substrate 30 d and the opposite substrate 40 a together and for sealing the liquid crystal layer 45 a between the active matrix substrate 30 d and the opposite substrate 40 a.

As shown in FIG. 7, the active matrix substrate 30 d includes: a transparent substrate (10 a, see FIG. 1); a plurality of gate lines 11 a on the transparent substrate 10 a extending parallel to each other in the horizontal direction of the drawing; a gate insulating film (12 a, see FIG. 1) covering the respective gate lines 11 a; a plurality of source lines 14 a on the gate insulating film 12 a extending parallel to each other in the direction (vertical direction in the drawing) that intersects the respective gate lines 11 a; a plurality of TFTs 5, one TFT being arranged at each intersection of the respective gate lines 11 a and the respective source lines 14 a, or namely, at each of respective sub-pixels P; an interlayer insulating film (17 a, see FIG. 1) covering the respective TFTs 5 and the respective source lines 14 a; a common electrode 18 a provided on the interlayer insulating film 17 a; an inorganic insulating film (19 a, see FIG. 1) covering the common electrode 18 a; a plurality of the pixel electrodes 20 d connected to the respective TFTs 5 and provided in a matrix on the inorganic insulating film 19 a as the second transparent electrodes; and an alignment film (not shown) covering the respective pixel electrodes 20 d.

As shown in FIG. 7, the pixel electrodes 20 d have a ladder shape and have a line-and-space pattern F constituted of a plurality of line-shaped line parts L extending parallel to each other and a plurality of spaces S respectively extending between the plurality of line parts L. As shown in FIG. 7, the spaces S are provided so as not to overlap the respective openings 18 c in the common electrode 18 a. As shown in FIG. 7, the pixel electrodes 20 d cover the edges of one side (the top side in the drawing) of the respective openings 18 c in the common electrode 18 a through the inorganic insulating film 19 a.

The active matrix substrate 30 d of the above configuration can be made if the pattern shape of the pixel electrode 20 a in the step of making the active matrix substrate of Embodiment 1 is changed.

As described above, according to the active matrix substrate 30 d of the present embodiment and the lateral electrical field liquid crystal display panel provided therewith, the respective pixel electrodes 20 d are the line-and-space pattern F constituted of the line-shaped line parts L and the spaces S provided so as not to overlap the respective openings 18 c in the common electrode 18 a; therefore, it is possible to suppress disconnection of the line parts L of the respective pixel electrodes 20 d and to suppress disconnection of the line-and-space pattern F pixel electrodes 20 d provided on the common electrode 18 a through the inorganic insulating film 19 a.

Embodiment 5

FIG. 8 is a cross-sectional view of a liquid crystal display panel 50 b of the present embodiment.

In the respective embodiments above, the lateral electrical field liquid crystal display panel (50 a) was shown as an example, but in the present embodiment, the vertical electrical field liquid crystal display panel 50 b is shown as an example.

As shown in FIG. 8, the liquid crystal display panel 50 b of the present embodiment includes: an active matrix substrate 30 e and an opposite substrate 40 b facing each other; a liquid crystal layer 45 b between the active matrix substrate 30 e and the opposite substrate 40 b; and a frame-shaped sealing member for bonding the active matrix substrate 30 e and the opposite substrate 40 b together and for sealing the liquid crystal layer 45 b between the active matrix substrate 30 e and the opposite substrate 40 b. In the liquid crystal display panel 50 b, a display area that performs image display is defined inside the sealing member, and a plurality of pixels are arranged in a matrix in this display area. A sub-pixel P (see FIG. 2) for red gradient display, a sub-pixel P for green gradient display, and a sub-pixel P for blue gradient display, for example, are arrayed in the respective pixels.

As shown in FIG. 8, the active matrix substrate 30 e includes: a transparent substrate 10 a; a plurality of gate lines 11 a on the transparent substrate 10 a extending parallel to each other; a gate insulating film 12 a covering the respective gate lines 11 a; a plurality of source lines 14 a on the gate insulating film 12 a extending parallel to each other in the direction that intersects the respective gate lines 11 a; a plurality of TFTs 5, one TFT being arranged at each intersection of the respective gate lines 11 a and the respective source lines 14 a, or namely, at each of respective sub-pixels P; an interlayer insulating film 17 a covering the respective TFTs 5 and the respective source lines 14 a; a first transparent electrode 18 b provided on the interlayer insulating film 17 a; an inorganic insulating film 19 a covering the first transparent electrode 18 b; a plurality of pixel electrodes 20 connected to the respective TFTs 5 and provided in a matrix on the inorganic insulating film 19 a as the second transparent electrodes; and an alignment film (not shown) covering the respective pixel electrodes 20. In the active matrix substrate 30 e, the pixel electrodes 20 may have any configuration from the pixel electrodes 20 a to 20 d in the respective embodiments above.

As shown in FIG. 8, a first transparent electrode 18 b is integrally formed across all of the sub-pixels P, and has a rectangular opening 18 c in each of the respective sub-pixels P for connecting the drain electrode 14 b to the pixel electrode 20. As shown in FIG. 8, the first transparent electrode 18 b forms an auxiliary capacitance 6 by overlapping the pixel electrodes 20 through the inorganic insulating film 19 a in the respective sub-pixels P.

As shown in FIG. 8, the opposite substrate 40 b includes: a transparent substrate 10 b; a grid-shaped black matrix (not shown) on the transparent substrate 10 b; a plurality of colored layers (not shown) such as red layers, green layers, and blue layers respectively disposed between the respective grid lines of the black matrix; a common electrode 31 covering the black matrix and the respective colored layers; a plurality of column-shaped photo spacers (not shown) on the common electrode 31; and an alignment film (not shown) covering the common electrode 31 and the respective photo spacers.

The liquid crystal layer 45 b is made of a nematic liquid crystal material having electro-optical properties, or the like, and includes liquid crystal molecules of a dielectric constant anisotropy (Δ∈<0). In the present embodiment, the liquid crystal layer 45 b operating in VA (vertical alignment) mode was shown as an example, but the liquid crystal layer 45 b may also operate in PSA (polymer sustained alignment) mode or the like.

The liquid crystal display panel 50 b of the above-mentioned configuration applies a prescribed voltage for the respective sub-pixels P to the liquid crystal layer 45 b arranged between the respective pixel electrodes 20 on the active matrix substrate 30 e and the common electrode 31 on the opposite substrate 40 b in order to change the orientation state of the liquid crystal layer 45 b with a vertical electric field. This changes the transmittance of light passing through the panel for the respective sub-pixels P in order to display an image.

The liquid crystal display panel 50 b of the present embodiment can be manufactured by depositing an oxide conductive film (thickness of approximately 50 nm) such as an amorphous ITO film or IZO film by sputtering, for example, on the substrate before the respective photo spacers have been formed but after the respective colored layers have been formed in the step of making the opposite substrate in Embodiment 1, thereby forming the common electrode 31.

As described above, according to the active matrix substrate 30 e of the present embodiment and the vertical electrical field liquid crystal display panel 50 b provided therewith, the respective pixel electrodes 20 are a line-and-space pattern F constituted of line-shaped line parts L and spaces S provided so as not to overlap the respective openings 18 c in the first transparent electrode 18 b; therefore, it is possible to suppress disconnection of the line parts L of the respective pixel electrodes 20 and to suppress disconnection of the line-and-space pattern F pixel electrodes 20 provided on the common electrode 18 b through the inorganic insulating film 19 a.

In the respective embodiments above, a bottom-gate TFT was shown as an example of a switching elements, but the present invention is also applicable to other two terminal or three terminal switching elements such as a top-gate TFT or MIM (metal insulator metal).

In the respective embodiments above, an active matrix substrate in which the electrodes of the respective TFTs connected to the pixel electrodes were drain electrodes was shown as an example, but the present invention is also applicable to an active matrix substrate in which the electrodes of the respective TFTs connected to the pixel electrode electrodes are source electrodes.

INDUSTRIAL APPLICABILITY

As described above, the present invention can suppress disconnection of line-and-space pattern second transparent electrodes provided on a first transparent electrode through an inorganic insulating film; therefore, the present invention is useful for a liquid crystal display panel that has pixel electrodes having line-and-space patterns for regulating the orientation of the liquid crystal layer and that operates in an IPS (in plane switching) mode, VA mode, PSA mode, or the like. The present invention is also useful for an active matrix substrate provided with this liquid crystal display panel.

DESCRIPTION OF REFERENCE CHARACTERS

-   -   F line-and-space pattern     -   L line part     -   P sub-pixel     -   S space     -   5 TFT (switching element)     -   6 auxiliary capacitance     -   17 a interlayer insulating film     -   17 ca contact hole     -   18 c opening     -   18 a common electrode (first transparent electrode)     -   18 b first transparent electrode     -   19 a inorganic insulating film     -   20, 20 a to 20 d pixel electrode (second transparent electrode)     -   30 a to 30 e active matrix substrate     -   31 common electrode     -   40 a, 40 b opposite substrate     -   45 a, 45 b liquid crystal layer     -   50 a, 50 b liquid crystal display panel 

1. An active matrix substrate, comprising: a plurality of sub-pixels arranged in a matrix; a switching element disposed in each of the sub-pixels; at least one interlayer insulating film covering the switching elements and having contact holes formed in the respective sub-pixels, the contact holes reaching the respective switching elements; a first transparent electrode disposed on the at least one interlayer insulating film and having an opening in each of the respective sub-pixels; an inorganic insulating film covering the first transparent electrode; and a plurality of second transparent electrodes disposed on the inorganic insulating film and respectively connecting to the switching elements through the respective contact holes in the at least one interlayer insulating film and the respective openings in the first transparent electrode, wherein the respective second transparent electrodes have a line-and-space pattern constituted of line parts and spaces, the spaces being disposed so as not to overlap the respective openings in the first transparent electrode.
 2. The active matrix substrate according to claim 1, wherein the respective second transparent electrodes cover the respective openings in the first transparent electrode across the inorganic insulating film.
 3. The active matrix substrate according to claim 1, wherein the respective openings in the first transparent electrode are rectangular, and wherein the respective second transparent electrodes cover at least one edge of the respective openings in the first electrode across the inorganic insulating film.
 4. The active matrix substrate according to claim 1, wherein the inorganic insulating film is a silicon oxide film or a silicon nitride film deposited by sputtering.
 5. A liquid crystal display panel, comprising: the active matrix substrate according to claim 1; an opposite substrate that faces the active matrix substrate; and a liquid crystal layer disposed between the active matrix substrate and the opposite substrate.
 6. The liquid crystal display panel according to claim 5, wherein a voltage is applied to the liquid crystal layer through the first transparent electrode and the respective second transparent electrodes.
 7. The liquid crystal display panel according to claim 5, wherein a common electrode is disposed on the opposite substrate, and wherein a voltage is applied to the liquid crystal layer through the respective second transparent electrodes and the common electrode. 